STMicroelectronics SPC572L series Reference Manual page 603

RM0400
Field
Factory Erase (Read/Write).
FERS is used for Erase and Program operations to enable faster operation.
Factory Erase must adhere to Initial maximum (All Temperatures) conditions, with respect to
voltage conditions and Write/Erase cycling. The temperature can range from -40 °C to 150 °C.
Factory erase does not support Read and RWW operations.
– FERS may be set to enable a Factory Erase or Program after setting ERS or PGM but prior
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– FERS can be cleared only when EHV is low and DONE is high.
FERS
– FERS is cleared on reset.
Note: Factory Erase may also be disabled by writing a location in the UTEST Nonvolatile
0 Factor Erase is disabled.
1 Factory Erase is enabled.
Reserved (read only)
25–26
Writing to this bit has no effect and Reads always return 0.
Program (Read/Write)
PGM is used to setup the Flash Memory module for a Program operation.
– 0–1 transition of PGM initiates a program sequence.
– 1–0 transition of PGM ends the program sequence.
PGM can be set only under the following conditions:
– User Mode Read (ERS is low and UT0[AIE] is low).
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– Erase Suspend (ERS and ESUS high) with EHV low.
PGM
PGM can be cleared by the user only when PSUS and EHV are low and DONE is high.
PGM is cleared on reset.
Note: In an erase-suspended program, programming Flash memory locations in blocks which
0 Flash is not executing a program sequence.
1 Flash is executing a program sequence.
Table 298. MCR field descriptions(Continued)
to setting EHV.
Memory space. Address 0x800020 in the UTEST Nonvolatile Memory space is checked
at reset, and if programmed with data that contains at least one zero, a Factory Erase is
not allowed, and FERS is locked. Writes attempted that violate the above cases result
in FERS remaining cleared.
were being operated on in the Erase is forbidden. Command is not accepted and PEG
is set to 0
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Embedded Flash Memory (MP55)
Description
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