Texas Instruments OMAP5912 Reference Manual page 884

Multimedia processor device overview and architecture
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Software NAND Flash Controller
Figure 22.
NAND Flash Device Interface Schematic
78
Memory Interfaces
OMAP5912
EMIFS
FLASH.D[7:0] or FLASH.D[15:0]
-
CS: Most NAND flash devices require that CS be low during the read
access time (t
). For example, the Samsung K9K1G08U0M device
R
requires CS to be low during t
cannot be used for the NAND flash chip-select. To resolve this issue, a
GPIO is multiplexed on this pin so that the processor can directly control
the state of the NAND flash chip-select during accesses. However, some
NAND flash devices, such as the Samsung K9F1G08Q0M and
K9F1G16U0M, do not require that CS be low during t
of flash devices, the OMAP161X chip-select can be used directly.
-
R/B: During read or write operations the NAND flash device R/B signal
goes low to indicate that the device is busy and that other operations must
wait until completion. To signal the OMAP161X that the operation has
completed, the R/B signal of the NAND flash device can be connected to
Config register
cs2b
GPIOx
Config register
1
FLASH.RDY
GPIO
FLASH.CS2UWE
cs2b
FLASH.WE
FLASH.CS2UOE
cs2b
FLASH.OE
FLASH.WP
FLASH.A[1]
FLASH.A[2]
. Thus, a standard OMAP161X chip-select
R
NAND flash
device
FLASH.CS2U
CS
VDDSHV5
R/B
WE
RE
WP
CLE
ALE
I/O7−0 or
IO15−0
. For these types
R
SPRU756A

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