Flash Memory Characteristics - Renesas H8/3067 Series User Manual

21.2.6

Flash Memory Characteristics

Table 21.19 shows the flash memory characteristics.
Table 21.19 Flash Memory Characteristics (1)
Conditions: V =4.5 to 5.5V, AV
CC
T =0 to +75°C (Programming/erasing operating temperature range: regular
a
specification)
T =0 to +85°C (Programming/erasing operating temperature range: wide-range
a
specification)
Item
Programming time * 1 * 2 * 4
Erase time * * *
1 3 5
Reprogramming count
Wait time after SWE bit setting *
Programming
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy write *
Wait time after PV bit clear *
Maximum programming count *
Wait time after SWE bit setting *
Erase
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after H'FF dummy write *
Wait time after EV bit clear *
Maximum erase count *
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or erase/erase-verify flowchart.
2. Programming time per 32 bytes (Shows the total period for which the P-bit in the flash memory control register
(FLMCR) is set. It does not include the programming verification time.)
3. Block erase time (Shows the total period for which the E-bit in FLMCR is set. It does not include the erase
verification time.)
4. To specify the maximum programming time (t
value (403) for the maximum programming count (N).
The wait time after P bit setting (z) should be changed as follows according to the programming counter value.
Programming counter value of 1 to 4 :
Programming counter value of 5 to 403 :
5. For the maximum erase time (t
(z) and the maximum erase count (N):
t (max) = Wait time after E bit setting (z) x maximum erase count (N)
E
To set the maximum erase time, the values of z and N should be set so as to satisfy the above formula.
Examples: When z = 5 [ms], N = 240 times
When z = 10 [ms], N = 120 times
=4.5 to 5.5V, V =AV
CC SS
Symbol
t
P
t
E
N
WEC
1
x
1
y
1 * 4
z
α
1
β
1
γ
1
ε
1
η
1
*
1 4
N
1
x
1
y
1 * 5
z
α
1
β
1
γ
1
ε
1
η
1
*
1 5
N
(max)) in the 32-byte programming flowchart, set the maximum
P
z = 150 µs
z = 500 µs
(max)), the following relationship applies between the wait time after E bit setting
E
Section 21 Electrical Characteristics
=0V
SS
Min Typ Max Unit
— 10 200 ms/32 bytes
— 100 1200 ms/block
— — 100 Times
10 — — µs
50 — — µs
150 — 500 µs
10 — — µs
10 — — µs
4 — — µs
2 — — µs
4 — — µs
— — 403 Times
10 — — µs
200 — — µs
5 — 10 ms
10 — — µs
10 — — µs
20 — — µs
2 — — µs
5 — — µs
120 — 240 Times
Rev. 4.00 Jan 26, 2006 page 735 of 938
Test
Condition
REJ09B0276-0400