Flash Memory Characteristics; Table 21.8 Flash Memory Characteristics - Renesas H8S Series Hardware Manual

21.5

Flash Memory Characteristics

Table 21.8 lists the flash memory characteristics.

Table 21.8 Flash Memory Characteristics

Conditions: V = 4.5 V to 5.5 V, AV
CC
T = 0 to +75°C (Programming/erasing operating temperature range)
a
Item
Programming time * * *
1 2 4
Erase time * * *
1 3 5
Reprogramming count
Programming Wait time after SWE bit setting *
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy write *
Wait time after PV bit clear *
Wait time after SWE bit clear *
Maximum programming count *
Wait time after SWE bit setting *
Erase
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after H'FF dummy write *
Wait time after EV bit clear *
Wait time after SWE bit clear *
Maximum erase count *
= 4.5 V to 5.5 V, V
CC
Symbol Min.
t
P
t
E
N
WEC
1
t
sswe
1
t
spsu
*
1 4
t
sp30
t
sp200
t
sp10
1
t
cp
1
t
cpsu
1
t
spv
1
t
spvr
1
t
cpv
1
t
cswe
*
1 4
N
1
t
sswe
1
t
sesu
*
1 5
t
se
1
t
ce
1
t
cesu
1
t
sev
1
t
sevr
1
t
cev
1
t
cswe
*
1 5
N
Section 21 Electrical Characteristics
= PLLV = AV
SS SS
Typ. Max. Unit
— 10 200
ms/
128 bytes
— 100 1200 ms/block
— — 100 times
1 1 — µs
50 50 — µs
28 30 32 µs
198 200 202 µs
8 10 12 µs
5 5 — µs
5 5 — µs
4 4 — µs
2 2 — µs
2 2 — µs
100 100 — µs
— — 1000 times
1 1 — µs
100 100 — µs
10 10 100 ms
10 10 — µs
10 10 — µs
20 20 — µs
2 2 — µs
4 4 — µs
100 100 — µs
12 — 120 times
Rev. 6.00 Mar 15, 2006 page 521 of 570
= 0 V,
SS
Test
Condition
Programming
time wait
Programming
time wait
Additional-
programming
time wait
Erase time
wait
REJ09B0211-0600