Flash Memory Characteristics; Table 26.13 Flash Memory Characteristics - Renesas H8S Series Hardware Manual

Section 26 Electrical Characteristics
26.4

Flash Memory Characteristics

Table 26.13 lists the flash memory characteristics.

Table 26.13 Flash Memory Characteristics

Conditions: V
CC
V
SS
Ta = 0°C to +75°C (operating temperature range for programming/erasing)
Item
1 2
Programming time* * *
1 2 4
Erase time* * *
Programming time
1 2 4
(total)* * *
1 2 4
Erase time (total)*
* *
Programming and Erase
1 2 4
time (total)* * *
Reprogramming count
4
Data retention time*
Notes: 1. Programming and erase time depends on the data.
2. Programming and erase time do not include data transfer time.
3 This value indicates the minimum number of which the flash memory are
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges
from 1 to the minimum number.)
4. This value indicates the characteristics while the flash memory is reprogrammed within
the specified range (including the minimum number).
Rev. 3.00 Jul. 14, 2005 Page 972 of 986
REJ09B0098-0300
= 3.0 V to 3.6 V, AV
= AV = 0 V
SS
Symbol Min.

4
t
P

t
E


Σ t 
P
Σ t 
E
Σ t 
PE
3
N 100*
WEC
t 10
DRP
= 3.0 V to 3.6 V, Avref = 3.0 V to AV
CC
Typ. Max. Unit
3 30 ms/128 bytes
80 800 ms/4-kbyte block
500 5000 ms/32-kbyte block
1000 10000 ms/64-kbyte block
20 60 s/1 Mbyte
20 60 s/1 Mbytes
40 120 s/1 Mbytes
 
Times


Years
,
CC
Test Conditions
Ta = 25°C
Ta = 25°C
Ta = 25°C