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Appendix B Internal I/O Registers
FLMCR-Flash Memory Control Register
Modes 1 to
Initial value
4, and 6
Read/Write
Modes 5
Initial value
and 7
Read/Write
Software write enable bit
0
1
Flash write enable bit
0
When a low level is input to the FWE pin (hardware protection state)
1
When a high level is input to the FWE pin
Note: This register is used only in the flash memory and flash memory R versions.
Reading the corresponding address in a mask ROM version will always return
1s, and writes to this address are disabled.
Fix the FWE pin low in mode 6.
Rev. 4.00 Jan 26, 2006 page 812 of 938
REJ09B0276-0400
7
6
5
Bit
FWE
SWE
ESU
0
0
0
R
R
R
1/0
0
0
R
R/W
R/W
Erase-verify mode
0
1
Program setup
0
Program setup cleared (Initial value)
1
Program setup
[Setting condition]
When FWE = 1 and SWE = 1
Erase setup bit
0
Erase setup cleared (Initial value)
1
Erase setup
[Setting condition]
When FWE = 1 and SWE = 1
Write/erase disabled (Initial value)
Write/erase enabled
[Setting condition]
When FWE = 1
H'EE030
4
3
2
PSU
EV
PV
0
0
0
R
R
R
0
0
0
R/W
R/W
R/W
Program mode
0
1
Erase mode
0
Erase mode cleared (Initial value)
1
Transition to erase mode
[Setting condition]
When FWE = 1, SWE = 1, and ESU = 1
Program-verify mode
0
Program-verify mode cleared (Initial value)
1
Transition to program-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
Erase-verify mode cleared (Initial value)
Transition to erase-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
Flash Memory
1
0
E
P
0
0
R
R
0
0
R/W
R/W
Program mode cleared (Initial value)
Transition to program mode
[Setting condition]
When FWE = 1, SWE = 1, and PSU = 1
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