Flash Memory Characteristics; Table 15.32 Flash Memory Characteristics - Renesas H8/3847R Series Hardware Manual

Section 15 Electrical Characteristics
15.8.6

Flash Memory Characteristics

Table 15.32 Flash Memory Characteristics
Condition: AV = 2.7 V to 5.5 V, V
CC
operating voltage when reading), V
when programming/erasing), T
when programming/erasing: product with regular specifications, product with wide-
range temperature specifications)
Item
Programming time * * *
1 2 4
Erase time * * *
1 3 5
Reprogramming count
Data retain period
Programming Wait time after
SWE-bit setting *
Wait time after
PSU-bit setting *
Wait time after
P-bit setting *
Wait time after
P-bit clear *
Wait time after
PSU-bit clear *
Wait time after
PV-bit setting *
Wait time after
dummy write *
Wait time after
PV-bit clear *
Wait time after
SWE-bit clear *
Maximum
programming
count *
1
Rev. 6.00 Aug 04, 2006 page 532 of 680
REJ09B0145-0600
SS
Symbol
t
P
t
E
N
WEC
t
DRP
x
1
y
1
z1
*
1 4
z2
z3
α
1
β
1
γ
1
ε
1
η
1
θ
1
N
* *
4 5
= AV = 0.0 V, V
SS CC
= 3.0 V to 5.5 V (range of operating voltage
CC
= –20°C to +75°C (range of operating temperature
a
Values
Min Typ Max
— 7 200
— 100 1200
1000 * 10000 *
8 9
—
10 *
10
— —
1 — —
50 — —
28 30 32
198 200 202
8 10 12
5 — —
5 — —
4 — —
2 — —
2 — —
100 — —
— — 1000
= 2.7 V to 5.5 V (range of
Test
Unit Conditions
ms/128 bytes
ms/block
times
year
µs
µs
1 ≤ n ≤ 6
µs
7 ≤ n ≤ 1000
µs
µs Additional
programming
µs
µs
µs
µs
µs
µs
times