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Section 21 Electrical Characteristics
Table 21.19 Flash Memory Characteristics (2)
Conditions: V
=3.0 to 3.6 V, AV
CC
T
=0 to +75°C (Programming/erasing operating temperature range: regular
a
specification)
T
=0 to +85°C (Programming/erasing operating temperature range: wide-range
a
specification)
Item
Programming time *
1
*
2
*
4
Erase time *
*
*
1
3
5
Reprogramming count
Wait time after SWE bit setting *
Programming
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy write *
Wait time after PV bit clear *
Maximum programming count *
Wait time after SWE bit setting *
Erase
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after H'FF dummy write *
Wait time after EV bit clear *
Maximum erase count *
Notes:
1.
Make each time setting in accordance with the program/program-verify flowchart or erase/erase-verify flowchart.
2.
Programming time per 32 bytes (Shows the total period for which the P-bit in the flash memory control register
(FLMCR) is set. It does not include the programming verification time.)
3.
Block erase time (Shows the total period for which the E-bit in FLMCR is set. It does not include the erase
verification time.)
4.
To specify the maximum programming time (t
(403) for the maximum programming count (N).
The wait time after P bit setting (z) should be changed as follows according to the programming counter value.
Programming counter value of 1 to 4 :
Programming counter value of 5 to 403 :
5.
For the maximum erase time (t
(z) and the maximum erase count (N):
(max) = Wait time after E bit setting (z) × maximum erase count (N)
t
E
To set the maximum erase time, the values of z and N should be set so as to satisfy the above formula.
Examples: When z = 5 [ms], N = 240 times
When z = 10 [ms], N = 120 times
Rev. 4.00 Jan 26, 2006 page 736 of 938
REJ09B0276-0400
=3.0 to 3.6 V, V
CC
SS
Symbol
t
P
t
E
N
WEC
1
x
1
y
*
1
4
z
α
1
β
1
γ
1
ε
1
η
1
*
1
4
N
1
x
1
y
1
*
5
z
α
1
β
1
γ
1
ε
1
η
1
*
1
5
N
(max)) in the 32-byte programming flowchart, set the max. value
P
z = 150 µs
z = 500 µs
(max)), the following relationship applies between the wait time after E bit setting
E
=AV
=0V
SS
Min
Typ
Max
—
10
200
—
100
1200
—
—
100
10
—
—
50
—
—
150
—
500
10
—
—
10
—
—
4
—
—
2
—
—
4
—
—
—
—
403
10
—
—
200
—
—
5
—
10
10
—
—
10
—
—
20
—
—
2
—
—
5
—
—
120
—
240
Test
Unit
Condition
ms/32 bytes
ms/block
Times
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
Times
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