Notes On Memory Programming - Renesas H8/3067 Series User Manual

V
CC
RES
FWE
Note: Set the FWE input pin low level, except in the auto-program and auto-erase modes.
Figure 18.23 Oscillation Stabilization Time, Boot Program Transfer Time
18.8.9

Notes On Memory Programming

• When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming (figure 18.24).
• When performing programming using PROM mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas.
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
2. In the PROM mode, auto-programming to a 128-byte programming unit block should
be performed only once.
Do not perform additional programming to a programmed 128-byte programming unit
block.
To reprogram, perform auto-programming after auto-erasing.
Figure 18.24 Reprogramming to Programmed Address
Memory read
mode
Command wait
t t state
osc1 bmv
Reprogram to
programmed address
Auto-erase (chip batch)
Auto-program mode
Auto-erase mode
Auto-program
End
Rev. 4.00 Jan 26, 2006 page 657 of 938
Section 18 ROM
Command wait state
Normal/abnormal
end identification t
dwn
REJ09B0276-0400