D/A Conversion Characteristics; Flash Memory Characteristics - Renesas H8S Series Hardware Manual

22.3.5

D/A Conversion Characteristics

Table 22-20 lists the D/A conversion characteristics.
Table 22-20 D/A Conversion Characteristics
Conditions: V = AV
CC CC
φ = 10 to 20 MHz, T
T = –40 to +85°C (wide-range specifications)
a
Item
Resolution
Conversion time
Absolute accuracy
22.3.6

Flash Memory Characteristics

Table 22-21 Flash Memory Characteristics (HD64F2398F20, HD64F2398TE20)
= 5.0 V ± 10%, AV
Conditions: V
CC
T = 0 to +75°C (Programming/erasing operating temperature, regular specifications), T
a
(Programming/erasing operating temperature, wide-range specifications)
Item
Programming time*
Erase time*
Reprogramming count
Programming Wait time after SWE bit
Rev.6.00 Oct.28.2004 page 724 of 1016
REJ09B0138-0600H
= 5.0 V ± 10%, V
= 4.5 V to AV
ref
= –20 to +75°C (regular specifications),
a
Min
8
—
—
—
= 5.0 V ± 10%, V
CC
1 2 4
* *
1 3 6
* *
1
setting*
Wait time after PSU bit
1
setting*
Wait time after P bit
1 4
setting* *
Wait time after P bit clear*
Wait time after PSU bit
1
clear*
Wait time after PV bit
1
setting*
Wait time after H'FF dummy
1
write*
Wait time after PV bit clear*
, V = AV
CC SS
Typ Max
8 8
— 10
±1.0 ±1.5
±1.0
—
= 4.5 V to AV
ref
Symbol Min Typ
t — 10
P
t — 50
E
N — —
WEC
x 1 —
y 50 —
z (z1) — —
(z2) — —
(z3) — —
α
1
5 —
β
5 —
γ
4 —
ε
2 —
η
1
2 —
= 0 V,
SS
Unit Test Conditions
bits
µs
20-pF capacitive load
LSB 2-MΩ resistive load
LSB 4-MΩ resistive load
, V = AV = 0V
CC SS SS
Max Unit
200 ms/128
bytes
1000 ms/block
100 Times
µs
—
µs
—
µs
30
µs
200
µs
10
µs
—
µs
—
µs
—
µs
—
µs
—
= 0 to + 85°C
a
Test
Condition
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
Additional
program-
ming wait