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Section 18 ROM
(7) Do not use an interrupt during flash memory programming or erasing.
Since programming/erase operations (including emulation by RAM) have priority when a high
level is input to the FWE pin, disable all interrupt requests, including NMI.
(8) Do not perform additional programming. Reprogram flash memory after erasing.
With on-board programming, program to 32-byte programming unit blocks one time only.
Program to 128-byte programming unit blocks one time only even in the PROM mode. Erase
all the programming unit blocks before reprogramming.
Bus release must also be disabled.
φ
V
CC
FWE
1
MD
to MD
*
2
0
RES
SWE bit
Flash memory access disabled period
(x: Wait time after SWE setting)*
Flash memory reprogrammable period
(Flash memory program execution and data read, other than verify, are disabled.)
Always fix the level by pulling down or pulling up the mode pins (MD
Notes:
1.
until powering off, except for mode switching.
See 21.2.6 Flash Memory Characteristics.
2.
Rev. 4.00 Jan 26, 2006 page 660 of 938
REJ09B0276-0400
Wait time: x
t
OSC1
t
MDS
t
MDS
SWE
set
2
Figure 18.25 Powering On/Off Timing (Boot Mode)
Programming and
erase possible
min 0µs
SWE
clear
min 0µs
to MD
)
2
0
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