Flash Memory Characteristics; Table 24.25 Flash Memory Characteristics - Renesas H8S/2368 Series Hardware Manual

24.3

Flash Memory Characteristics

Table 24.25 Flash Memory Characteristics

Conditions: V = 3.0 V to 3.6 V, AV
CC
V = AV
SS
regular specifications), T
range: wide-range specifications)
Item
1
Programming time* *
1 3 6
Erase time*
* *
Rewrite times
Programming Wait time after
SWE bit setting*
Wait time after
PSU bit setting*
Wait time after
P bit setting*
Wait time after
P bit clearing*
Wait time after
PSU bit clearing*
Wait time after
PV bit setting*
Wait time after
H'FF dummy
1
write*
Wait time after
PV bit clearing*
Wait time after
SWE bit clearing*
Maximum number
of writes*
= 3.0 V to 3.6 V, V
CC
= 0 V, T = 0°C to 75°C (program/erase operating temperature range:
SS a
= 0°C to 85°C (program/erase operating temperature
a
Symbol Min
2 4
* t
P
t
E
N
WEC
x
1
y
1
z z1
1 4
*
z2
z3
α
1
β
1
γ
1
ε
η
1
θ
1
N
1 4
*
= 3.0 V to AV
ref
Typ Max
— 10 200
— 50 1000
— — 100
1 — —
50 — —
— — 30
— — 200
— — 10
5 — —
5 — —
4 — —
2 — —
2 — —
100 — —
— — 1000*
Rev. 2.00, 05/03, page 781 of 820
,
CC
Test
Unit Conditions
ms/
128 bytes
ms/
128 bytes
Times
µs
µs
µs 1 ≤ n ≤ 6
µs 7 ≤ n ≤ 1000
µs
Additional
program-
ming wait
µs
µs
µs
µs
µs
µs
5
Times