Flash Memory Characteristics - Renesas Hitachi H8S/2194 Series Hardware Manual

29.2.7

FLASH Memory Characteristics

Table 29.12 shows the flash memory characteristics.
Table 29.12 Flash Memory Characteristics (Preliminary)
Conditions: Vcc = 5.0 V ± 10%, AVcc = 5.0 V ± 10%, Vss = AVss = 0 V, Ta = 0 to +75°C
(operating temperature range at programming/erasing)
Item
*1*2*4
Programming time
*1*3*5
Erasing time
No. of reprogramming
At Wait time after SWE-bit setting
programming
Wait time after PSU-bit setting
Wait time after P-bit setting
Wait time after P-bit clearing
Wait time after PSU-bit clearing
Wait time after PV-bit setting
Wait time after dummy write
Wait time after PV-bit clearing
Maximum No. of programmings
At erasing Wait time after SWE-bit setting
Wait time after ESU-bit setting
Wait time after E-bit setting
Wait time after E-bit clearing
Wait time after ESU-bit clearing
Wait time after EV-bit setting
Wait time after dummy write
Wait time after EV-bit clearing
Maximum No. of erasings
Notes: 1. Perform each time setting according to the programming/erasing algorithm.
2. Programming time per 32 bytes (total time of setting P-bit of the flash memory control
register. Programming verify time is not included).
Symbol
t
P
t
E
N
WEC
*1
x
*1
y
*1*4
z
α
*1
β
*1
γ
*1
ε
*1
η
*1
*1*4*5
N
*1
x
*1
y
*1*6
z
α
*1
β
*1
γ
*1
ε
*1
η
*1
*1*6
N
Test
conditions Min Typ

10

100
 

10

50

150

10

10

4

2

4
 
When z
= 200 µs

10

200

5

10

10

20

2

5

120
Rev. 2.0, 11/00, page 839 of 1037
Max Unit
200 ms/
32 bytes
1200 ms/
block
100 Times
 µs
 µs
µs
200
 µs
 µs
 µs
 µs
 µs
1000 Times
 µs
 µs
10 ms
 µs
 µs
 µs
 µs
 µs
240 Times