Flash Memory Characteristics - Renesas H8S/2100 Series Hardware Manual

16-bit single-chip microcomputer
Hide thumbs Also See for H8S/2100 Series:
Table of Contents

Advertisement

Section 28 Electrical Characteristics
28.5

Flash Memory Characteristics

Table 28.13 lists the flash memory characteristics.
Table 28.13 Flash Memory Characteristics
Conditions:
V
CC
V
SS
Ta = 0°C to +75°C (operating temperature range for programming/erasing)
Item
1
2
4
Programming time*
*
*
1
2
4
Erase time*
*
*
Programming time (total)*
1
2
4
Erase time (total)*
*
*
Programming and Erase time
1
2
4
(total)*
*
*
Reprogramming count
4
Data retention time*
Notes: 1. Programming and erase time depends on the data.
2. Programming and erase time do not include data transfer time.
3 This value indicates the minimum number of which the flash memory are
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges
from 1 to the minimum number.)
4. This value indicates the characteristics while the flash memory is reprogrammed within
the specified range (including the minimum number).
Rev. 1.00 Apr. 28, 2008 Page 980 of 994
REJ09B0452-0100
= 3.0 V to 3.6 V, AV
= AV
= 0 V
SS
Symbol Min.
t
P
t
E
Σ
1
2
4
*
*
tP
Σ
tE
Σ
tPE
N
100*
WEC
t
10
DRP
= 3.0 V to 3.6 V, Avref = 3.0 V to AV
CC
Typ.
Max.
1
10
40
130
300
800
600
1500
1.4
4
1.4
4
2.9
8
3
1000
,
CC
Unit
Test Conditions
ms/128 bytes
ms/4-Kbyte
block
ms/32-Kbyte
block
ms/64-Kbyte
block
Ta = 25 °C
s/160 Kbytes
Ta = 25 °C
s/160 Kbytes
Ta = 25 °C
s/160 Kbytes
Times
Years

Advertisement

Table of Contents
loading

This manual is also suitable for:

H8s/2117r seriesR4f2117r

Table of Contents