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Table 18.12 DC Characteristics in Memory Read Mode
(Conditions: V
= 5.0 V ± 10%, V
CC
Item
Input high
0
–0
, A
7
0
voltage
Input low
0
–0
, A
7
0
voltage
OE, CE, WE
Schmitt trigger
input voltage
Output high
0
–0
7
0
voltage
Output low
0
–0
7
0
voltage
Input leakage
0
–0
, A
7
0
current
V
current
Reading
CC
Programming I
Erasing
Note: For the absolute maximum ratings, see section 20.2.1, Absolute Maximum Ratings
Exceeding the absolute maximum ratings may cause permanent damage to the chip.
= 0 V, T
SS
a
Symbol
Min
–A
V
2.2
16
0
IH
–A
V
0.3
16
0
IL
–
V
1.0
T
+
V
2.0
T
+
–
V
– V
0.4
T
T
V
2.4
OH
V
—
OL
–A
| I
|
—
16
0
LI
I
—
cc
—
cc
I
—
cc
= 25°C ± 5°C)
Typ
Max
—
Vcc + 0.3
—
0.8
—
2.5
—
3.5
—
—
—
—
—
0.45
—
2
40
65
50
85
50
85
Rev. 4.00 Jan 26, 2006 page 647 of 938
Section 18 ROM
Unit
Test Conditions
V
V
V
V
V
V
I
= – 200 µA
OH
V
I
= 1.6 mA
OL
µA
mA
mA
mA
REJ09B0276-0400
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