Flash Memory Characteristics - Renesas H8S/2633 Series Hardware Manual

25.6

Flash Memory Characteristics

Table 25-13 Flash Memory Characteristics
Conditions: V = PLLV
CC
V = AV
SS
40°C to +85°C (wide-range specifications)
Item
1
Programming time*
*
1 3 5
Erase time*
* *
Number of rewrites
Programming Wait time after SWE1 bit setting*
Wait time after PSU1 bit setting*
Wait time after P1 bit setting*
Wait time after P1 bit clearing*
Wait time after PSU1 bit clearing*
Wait time after PV1 bit setting*
Wait time after H'FF dummy write*
Wait time after PV1 bit clearing*
Maximum number of writes*
Common Wait time after SWE1 bit clearing*
Erasing Wait time after SWE1 bit setting*
Wait time after ESU1 bit setting*
Wait time after E1 bit setting*
Wait time after E1 bit clearing*
Wait time after ESU1 bit clearing*
Wait time after EV1 bit setting*
Wait time after H'FF dummy write*
Wait time after EV1 bit clearing*
Maximum number of erases*
Notes: *1 Follow the program/erase algorithms when making the time settings.
*2 Programming time per 128 bytes. (Indicates the total time during which the P1 bit is set
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
1048
= 3.0 V to 3.6 V, PV
CC
= PLLV = 0 V, T
SS SS
2 4
*
= 4.5 V to 5.5 V, AV
CC
= –20°C to +75°C (regular specifications), T
a
Symbol Min
t —
P
t —
E
N —
WEC
1
x0 1
1
y 50
1 4
* z0 —
z1 —
z2 —
α
1
5
β
1
5
γ
1
4
ε
1
2
η
1
2
1 4
N1 —
*
N2 —
1
x1 100
1
x 1
1
y 100
1 5
* z —
α
1
10
β
1
10
γ
1
6
ε
1
2
η
1
4
1 5
* N —
= 4.5 V to 5.5 V,
CC
a
Typ Max Unit
10 200 ms/128 bytes
100 1000 ms/block
50 100 Times
µs
— —
µs
— —
µs
— 30
µs
— 10
µs
— 200
µs
— —
µs
— —
µs
— —
µs
— —
µs
— —
— 6 Times
— 994 Times
µs
— —
µs
— —
µs
— —
— 10 ms
µs
— —
µs
— —
µs
— —
µs
— —
µs
— —
— 100 Times
= –