Flash Memory Characteristics - Renesas H8S/2100 Series Hardware Manual

6-bit single-chip microcomputer
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28.5

Flash Memory Characteristics

Table 28.13 lists the flash memory characteristics.
Table 28.13 Flash Memory Characteristics
Conditions:
V
CC
V
SS
Ta = 0°C to +75°C (operating temperature range for programming/erasing)
Item
1
2
Programming time*
*
*
1
2
4
Erase time*
*
*
Programming time (total)*
1
2
4
Erase time (total)*
*
*
Programming and Erase time
1
2
4
(total)*
*
*
Reprogramming count
4
Data retention time*
Notes: 1. Programming and erase time depends on the data.
2. Programming and erase time do not include data transfer time.
3 This value indicates the minimum number of which the flash memory are
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges
from 1 to the minimum number.)
4. This value indicates the characteristics while the flash memory is reprogrammed within
the specified range (including the minimum number).
= 3.0 V to 3.6 V, AV
= AV
= 0 V
SS
Symbol Min.
4
t
P
t
E
Σ
1
2
4
*
*
tP
Σ
tE
Σ
tPE
N
WEC
t
DRP
= 3.0 V to 3.6 V, Avref = 3.0 V to AV
CC
Typ.
Max.
1
10
40
130
300
800
1.4
4
1.4
4
2.9
8
3
100*
1000
10
Rev. 1.00 May 09, 2008 Page 939 of 954
Section 28 Electrical Characteristics
,
CC
Unit
Test Conditions
ms/128 bytes
ms/4 Kbytes
ms/32 Kbytes
Ta = 25 °C
s/96 Kbytes
Ta = 25 °C
s/96 Kbytes
Ta = 25 °C
s/96 Kbytes
Times
Years
REJ09B0462-0100

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