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Section 18 ROM
18.8.4
Memory Read Mode
AC Characteristics
Table 18.13 AC Characteristics in Memory Read Mode Transition
(Conditions: V
= 5.0 V ±10%, V
CC
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
A16-0
CE
OE
WE
I/O7-0
Note: Data is latched on the rising edge of WE.
Figure 18.16 Timing Waveform in Memory Read Mode Transition
Rev. 4.00 Jan 26, 2006 page 648 of 938
REJ09B0276-0400
= 0 V, T
= 25°C ±5°C)
SS
a
Symbol
t
nxtc
t
ceh
t
ces
t
dh
t
ds
t
wep
t
r
t
f
Command write
t
t
t
ces
ceh
t
wep
tf
tr
t
t
ds
dh
Min
Max
Unit
20
—
µs
0
—
ns
0
—
ns
50
—
ns
50
—
ns
70
—
ns
—
30
ns
—
30
ns
Memory read mode
ADDRESS STABLE
nxtc
Notes
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