Flash Memory Characteristics - Renesas F-ZTAT H8 Series Hardware Manual

8-bit single-chip microcomputer
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15. Electrical Characteristics (H8/3857 Group)
15.2.6

Flash Memory Characteristics

Table 15.10 shows the flash memory characteristics.
Table 15.10 Flash Memory Characteristics
Conditions: V
= 4.5 V to 5.5 V, AV
CC
(program/erase operating temperature range)
Item
1
2
4
Programming time*
*
*
1
3
5
Erase time*
*
*
Rewrite times
Programming
Wait time after SWE bit setting*
Wait time after PSU bit setting*
Wait time after P bit setting*
Wait time after P bit clearing*
Wait time after PSU bit clearing*
Wait time after PV bit setting*
Wait time after H'FF dummy write*
Wait time after PV bit clearing*
Maximum number of writes*
Erasing
Wait time after SWE bit setting*
Wait time after ESU bit setting*
Wait time after E bit setting*
Wait time after E bit clearing*
Wait time after ESU bit clearing*
Wait time after EV bit setting*
Wait time after H'FF dummy write*
Wait time after EV bit clearing*
Maximum number of erases*
Notes: 1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 32 bytes. (Indicates the total time during which the P bit is set in
flash memory control register 1 (FLMCR1). Does not include the program-verify time.)
3. Time to erase one block. (Indicates the time during which the E bit is set in FLMCR1.
Does not include the erase-verify time.)
4. Maximum programming time
(max) = Wait time after P bit setting (z) × maximum number of writes (N))
(t
P
5. Maximum erase time
(max) = Wait time after E bit setting (z) × maximum number of erases (N))
(t
E
Rev.3.00 Jul. 19, 2007 page 418 of 532
REJ09B0397-0300
= 4.5 V to 5.5 V, V
CC
Symbol
Min Typ Max Unit
t
P
t
E
N
WEC
1
x
10
1
y
50
1
4
*
z
α
1
10
β
1
10
γ
1
4
ε
1
2
η
1
4
1
4
*
N
1
x
10
1
y
200
1
5
*
z
α
1
10
β
1
10
γ
1
20
ε
1
2
η
1
5
1
5
*
N
= AV
= 0.0 V, T
SS
SS
a
10
200
ms/32 bytes
100
300
ms/block
100
Times
μs
μs
μs
200
μs
μs
μs
μs
μs
1000 Times
μs
μs
5
ms
μs
μs
μs
μs
μs
60
Times
= 0°C to +75°C
Test
Conditions

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