Program Mode - Renesas H8/3067 Series User Manual

Section 18 ROM
Normal mode
FWE=1 FWE=0
On-board
programming mode
software reprogramming
disable state
Notes:
1. Do not make a state transition by setting or clearing two or more
bits at the same time.
2. After transition from the erase mode to the erase setup state, do
not make a transition to the erase mode without going through the
software reprogramming enable state.
3. After transition from the erase mode to the erase setup state, do
not switch to the program mode without going through the software
reprogramming enable state.
Figure 18.10 State Transition by Setting of Each Bit of FLMCR
18.5.1

Program Mode

Follow the procedure shown in the program/program-verify flowchart in figure 18.11 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 32 bytes at a
time.
For the wait time (x, y, z, α, β, γ, ε, η) after setting or clearing each bit in the flash memory
control register (FLMCR) and the maximum programming count (N), see table 21.19 in section
21.2.6, Flash Memory Characteristics.
Following the elapse of (x) µs or more after the SWE bit is set to 1 in flash memory control
register (FLMCR), 32-byte program data is stored in the program data area and reprogram data
area, and the 32-byte data in the reprogram data area written consecutively to the write addresses.
Rev. 4.00 Jan 26, 2006 page 632 of 938
REJ09B0276-0400
* 1
SWE=1
Software
reprogramming
enable state
SWE=0
: Normal mode : On-board programming mode
* 2
E=1
Erase setup state
E=0
Erase-verify mode
3
*
P=1
Program setup state
P=0
Program-verify mode
Erase mode
Programming mode