Flash Memory Characteristics - Renesas F-ZTAT H8 Series Hardware Manual

22.2.6

Flash Memory Characteristics

Table 22.20 lists the flash memory characteristics.
Table 22.20 Flash Memory
Condition A: V = 2.7 V to 5.5 V, AV
CC
V = AV
SS
(regular specifications), T
Condition C: V = 5.0 V ± 10%, AV
CC
V = AV
SS
+75°C (regular specifications), T
Item
*
1
Programming time
*
1
Erase time
Erase-program cycle
*
1
Verify setup time 1
*
1
Verify setup time 2
Flash memory read
*
2
setup time
Notes: 1. To specify each time, follow the appropriate algorithm.
2. Before reading the flash memory, wait at least for the read setup time after clearing the
V E bit; lowering the voltage supplied to V
PP
when the external clock is used; or returning from standby mode. When the V
is cut off, t
flash memory is read.
CC
= 12 V ± 0.6 V, φ = 1 MHz to 8 MHz, T
= 0 V, V
SS PP
= –40°C to +85°C (wide-range specifications)
a
= 5.0 V ± 10%, V
CC
= 12 V ± 0.6 V, φ = 1 MHz to 16 MHz, T
= 0 V, V
SS PP
Symbol Min
t —
P
t —
E
N —
WEC
t 4
VS1
t 2
VS2
t 50
FRS
100
indicates the time from when the V
FRS
Section 22 Electrical Characteristics
= 2.7 V to 5.5 V, V
REF
= 4.5 V to AV
REF
= –40°C to +85°C (wide-range specifications)
a
Typ Max
50 1000
1 30
— 100
— —
— —
— —
— —
from 12 V to 0–5 V; turning on the power
PP
falls below V
PP
Rev. 7.00 Sep 21, 2005 page 711 of 878
= 2.7 V to AV ,
CC
= –20°C to +75°C
a
,
CC
= –20°C to
a
Unit Test Conditions
µs
s
time
µs
µs
≥ 4.5 V
µs V
CC
µs V < 4.5 V
CC
+ 2 V to when the
CC
REJ09B0259-0700
voltage
PP