Flash Memory Characteristics - Renesas F-ZTAT H8 Series Hardware Manual

Section 21 Electrical Characteristics
21.2.5

Flash Memory Characteristics

Table 21.10 Flash Memory Characteristics
Conditions: V = 4.5 V to 5.5 V, AV
CC
(program/erase operating temperature range)
Item
Programming time * * *
1 2 4
Erase time * * *
1 3 5
Reprogramming count
Data retention period
Programming Wait time after SWE bit setting *
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy
write *
1
Wait time after PV bit clear *
Wait time after SWE bit clear *
Maximum programming count *
Wait time after SWE bit setting *
Erase
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after H'FF dummy
write *
1
Wait time after EV bit clear *
Wait time after SWE bit clear *
Maximum erase count *
Rev. 3.00 Mar 21, 2006 page 642 of 814
REJ09B0302-0300
= 4.5 V to 5.5 V, V
CC
Symbol Min
t —
P
t —
E
100 *
N
WEC
10 *
T
DRP
1
tsswe 1
1
tspsu 50
*
1 4
tsp30 28
tsp200 198
tsp10 8
1
tcp 5
1
tcpsu 5
1
tspv 4
tspvr 2
1
tcpv 2
1
tcswe 100
*
1 4
N —
1
tsswe 1
1
tsesu 100
*
1 5
tse 10
1
tce 10
1
tcesu 10
1
tsev 20
tsevr 2
1
tcev 4
1
tcswe 100
*
1 5
N 12
= AV = 0 V, T
SS SS
Conditions
Typ Max Unit
10 200 ms/128
bytes
100 1200 ms/block
10.000 *
6 7
— Times
8
— — Years
1 — µs
50 — µs
30 32 µs
200 202 µs
10 12 µs
5 — µs
5 — µs
4 — µs
2 — µs
2 — µs

100 µs
— 1000 Times
1 — µs
100 — µs
10 100 ms
10 — µs
10 — µs
20 — µs
2 — µs
4 — µs

100 µs
— 120 Times
= 0°C to +75°C
a
Notes
Programming
time wait
Programming
time wait
Additional
programming
time wait
Erase time
wait