Register Descriptions; Flash Memory Control Register (Flmcr) - Renesas H8/3067 Series User Manual

18.3

Register Descriptions

18.3.1

Flash Memory Control Register (FLMCR)

FLMCR is an 8-bit register used for flash memory operating mode control. Program-verify mode
or erase-verify mode is entered by setting SWE to 1 when FWE = 1. Program mode is entered by
setting SWE to 1 when FWE = 1, then setting the PSU bit, and finally setting the P bit. Erase
mode is entered by setting SWE to 1 when FWE = 1, then setting the ESU bit, and finally setting
the E bit. FLMCR is initialized by a reset, and in hardware standby mode and software standby
mode. Its initial value is H'80 when a high level is input to the FWE pin, and H'00 when a low
level is input. In mode 6 the FWE pin must be fixed low, as flash memory on-board programming
is not supported. Therefore, bits in this register cannot be set to 1 in mode 6. When on-chip flash
memory is disabled, a read will return H'00, and writes are invalid. When setting bits 6 to 0 in this
register to 1, each bit should be set individually.
Writes to the ESU, PSU, EV and PV bits in FLMCR are enabled only when FWE = 1 and SWE =
1; writes to the E bit only when FWE = 1, SWE = 1, and ESU = 1; and writes to the P bit only
when FWE = 1, SWE = 1, and PSU = 1.
Rev. 4.00 Jan 26, 2006 page 611 of 938
Section 18 ROM
REJ09B0276-0400