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Chapter 11
Flash Memory Module (FTMRH)
11.1 Introduction
The FTMRH module implements the following:
• Program flash (flash) memory
The flash memory is ideal for single-supply applications allowing for field
reprogramming without requiring external high voltage sources for program or erase
operations. The flash module includes a memory controller that executes commands to
modify flash memory contents. The user interface to the memory controller consists of
the indexed Flash Common Command Object (FCCOB) register which is written to with
the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be
written to with a new command.
A flash byte or longword must be in the erased state before
being programmed. Cumulative programming of bits within a
flash byte or longword is not allowed.
The flash memory is read as longwords. Read access time is one bus cycle for longwords.
For flash memory, an erased bit reads 1 and a programmed bit reads 0.
11.2 Feature
11.2.1 Flash memory features
The flash memory has the following features:
• 16 KB of flash memory composed of one 16 KB flash block divided into 32 sectors
of 512 bytes
• Automated program and erase algorithm with verify
NXP Semiconductors
CAUTION
MC9S08SU16 Reference Manual, Rev. 5, 4/2017
155
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