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Features
The Gate drive Unit (GDU) module is designed for power conversion and three phase
motor control applications. It includes high side and low side Field Effect Transistor
(FET) pre-drivers, motor BEMF zero crossing detection circuit, two current sensing
amplifiers with per-configured 20x gain and limitation detection. GDU is also internally
connected to Crossbar module and PWM module and ADC module so the signal
propagation delays can be effectively reduced or minimized.
25.3 Features
The module includes the following distinctive features:
• 4.5 V~18 V supply voltage
• 3-phase bridge MOSTFET pre-drivers
• 3 high side P-MOSFET logic gate drivers
• 3 low side N-MOSFET logic gate drivers
• Controllable drive strength
• Voltage clamp circuit for high-side P-MOSFET pre-drivers with external clamp
capacitor
• Two low-side current measurement amplifiers for current measurement
• Differential input
• Pre-configured 20x gain
• Selectable offset sources
• Two over-limit comparators with programmable voltage threshold and digital
filter and selectable output level and programmable hysteresis control
• BEMF zero crossing detection in sensor-less BLDC applications
• Three Phase comparator with Digital filter and selectable output level and
programmable hysteresis control and windowed output
• Virtual neutral network circuit reconstructing 3 phase motor neutral
• Programmable Phase selection allows the maximize the gain of BEMF zero
crossing detection
• Selectable offset from internal 6bit DAC or external pin
• Over-voltage detection on supply VDD pin
25.4 Block diagram
The following figure shows the block diagram of GDU.
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MC9S08SU16 Reference Manual, Rev. 5, 4/2017
NXP Semiconductors
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