Memory Read Mode - Renesas H8 Series Hardware Manual

6.10.3

Memory Read Mode

1. After completion of auto-program/auto-erase/status read operations, a transition is made to the
command wait state. When reading memory contents, a transition to memory read mode must
first be made with a command write, after which the memory contents are read. Once memory
read mode has been entered, consecutive reads can be performed.
2. In memory read mode, command writes can be performed in the same way as in the command
wait state.
3. After powering on, memory read mode is entered.
4. Tables 6.14 to 6.16 show the AC characteristics.
Table 6.14 AC Characteristics in Transition to Memory Read Mode
Conditions: V = 3.3 V ±0.3 V, V
CC
Item
Command write cycle
hold time
C E
setup time
C E
Data hold time
Data setup time
Write pulse width
rise time
W E
fall time
W E
A15−A0
OE OE
WE
I/O7−I/O0
Note: Data is latched on the rising edge of WE.
Figure 6.13 Timing Waveforms for Memory Read after Memory Write
= 0 V, T
SS
Symbol
t
nxtc
t
ceh
t
ces
t
dh
t
ds
t
wep
t
r
t
f
Command write
t
ces
CE CE
t
wep
t
f
t
ds
= 25°C ±5°C
a
Min Max
20 —
0 —
0 —
50 —
50 —
70 —
— 30
— 30
Memory read mode
Address stable
t
t
ceh
nxtc
t
r
t
dh
Rev. 7.00 Mar 10, 2005 page 179 of 652
Section 6 ROM
Unit Notes
µs Figure 6.13
ns
ns
ns
ns
ns
ns
ns
REJ09B0042-0700