Figure 6.13 Timing Waveforms For Memory Read After Memory Write; Table 6.16 Ac Characteristics In Transition From Memory Read Mode To Another Mode - Renesas H8/3847R Series Hardware Manual

A15−A0
CE CE
OE OE
WE
I/O7−I/O0
Note: Data is latched on the rising edge of WE.

Figure 6.13 Timing Waveforms for Memory Read after Memory Write

Table 6.16 AC Characteristics in Transition from Memory Read Mode to Another Mode

Conditions: V = 3.3 V ±0.3 V, V
CC
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Command write
t t
t
ces
ceh
nxtc
t
wep
t t
f r
t t
ds dh
= 0 V, T = 25°C ±5°C
SS a
Symbol Min
t 20
nxtc
t 0
ceh
t 0
ces
t 50
dh
t 50
ds
t 70
wep
t —
r
t —
f
Memory read mode
Address stable
Max Unit
— µs
— ns
— ns
— ns
— ns
— ns
30 ns
30 ns
Rev. 6.00 Aug 04, 2006 page 191 of 680
Section 6 ROM
Notes
Figure 6.14
REJ09B0145-0600