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6.10.3
Memory Read Mode
1. After completion of auto-program/auto-erase/status read operations, a transition is made to the
command wait state. When reading memory contents, a transition to memory read mode must
first be made with a command write, after which the memory contents are read. Once memory
read mode has been entered, consecutive reads can be performed.
2. In memory read mode, command writes can be performed in the same way as in the command
wait state.
3. After powering on, memory read mode is entered.
4. Tables 6.14 to 6.16 show the AC characteristics.
Table 6.14 AC Characteristics in Transition to Memory Read Mode
Conditions: V
= 3.3 V ±0.3 V, V
CC
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
A15−A0
CE
CE
OE
OE
WE
I/O7−I/O0
Note: Data is latched on the rising edge of WE.
Figure 6.13 Timing Waveforms for Memory Read after Memory Write
= 0 V, T
= 25°C ±5°C
SS
a
Symbol
Min
t
20
nxtc
t
0
ceh
t
0
ces
t
50
dh
t
50
ds
t
70
wep
t
—
r
t
—
f
Command write
t
t
t
ces
ceh
nxtc
t
wep
t
t
f
r
t
t
ds
dh
Max
Unit
Notes
—
µs
Figure 6.13
—
ns
—
ns
—
ns
—
ns
—
ns
30
ns
30
ns
Memory read mode
Address stable
Rev. 6.00, 08/04, page 175 of 628
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