User Program Mode; Figure 21.9 Programming/Erasing Overview Flow - Renesas H8S Series Hardware Manual

Section 21 Flash Memory (0.18-µm F-ZTAT Version)
21.4.2

User Program Mode

The user MAT can be programmed/erased in user program mode. (The user boot MAT cannot be
programmed/erased.)
Programming/erasing is executed by downloading the program built in the microcomputer
beforehand.
The programming/erasing overview flow is shown in figure 21.9.
High voltage is applied to internal flash memory during the programming/erasing processing.
Therefore, a transition to the reset state or hardware standby mode must not be made. Doing so
may damage and destroy flash memory. If a reset is executed accidentally, the reset must be
released after a reset input period of 100 µs which is longer than normal.
Programming/erasing
start
When programming,
program data is prepared
Programming/erasing
procedure program is
transferred to the on-chip
RAM and executed
Programming/erasing
end
Rev. 3.00 Jul. 14, 2005 Page 768 of 986
REJ09B0098-0300
1. Make sure the program data does not overlap the download
destination specified by FTDAR.
2. The FWE bit is set to 1 by inputting a high level signal to the FWE
pin.
3. Programming/erasing can be executed only in the on-chip RAM.
However, if the program data is in a consecutive area and can be
accessed by the MOV.B instruction of the CPU like RAM or
ROM, the program data can be in an external space.
4. After programming/erasing is finished, input a low level signal to
the FWE pin and enter the hardware protection state.

Figure 21.9 Programming/Erasing Overview Flow