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24.8.2
User Program Mode
Programming/erasing of the user MAT is executed by downloading an on-chip program. The
programming/erasing flow is shown in figure 24.10.
Since high voltage is applied to the internal flash memory during programming/erasing, a
transition to the reset state must not be made during programming/erasing. A transition to the reset
state during programming/erasing may damage the flash memory. If a reset is input, the reset must
be released after the reset input period (period of RES = 0) of at least 100 µs.
Programming/erasing
start
When programming,
program data is prepared
Programming/erasing
procedure program is
transferred to the on-chip
RAM and executed
Programming/erasing
end
1.
Programming/erasing is executed only in the on-chip RAM.
2.
After programming/erasing is finished, protect the flash memory
by the hardware protection.
3.
Make sure that the program data do not overlap with the
download destination specified by FTDAR.
Figure 24.10 Programming/Erasing Flow
Section 24 Flash Memory
Rev. 1.00 May 09, 2008 Page 747 of 954
REJ09B0462-0100
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