Flash Memory Register Descriptions; Flash Memory Control Register 1 (Flmcr1) - Renesas Hitachi H8S/2194 Series Hardware Manual

8.3

Flash Memory Register Descriptions

8.3.1

Flash Memory Control Register 1 (FLMCR1)

Bit : 7
FWE
— *
Initial value :
R/W : R
Note: * Determined by the state of the FWE pin.
FLMCR1 is an 8-bit register used for flash memory operating mode control. Program-verify
mode or erase-verify mode for addresses H'00000 to H'1FFFF is entered by setting SWE to 1
while FWE is 1 and then setting the EV1 bit or PV1 bit. Program mode for addresses H'00000
to H'1FFFF is entered by setting SWE to 1 while FWE is 1, then setting the PSU1 bit, and finally
setting the P1 bit. Erase mode for addresses H'00000 to H'1FFFF is entered by setting SWE to 1
while FWE is 1, then setting the ESU1 bit, and finally setting the E1 bit. FLMCR1 is initialized
by a reset, in power-down state (excluding the medium-speed mode, module stop mode, and
sleep mode), or when a low level is input to the FWE pin. When a high level is input to the
FWE pin, its initial value is H'80 and when a low level is input, its initial value is H'00.
Writes to the SWE, ESU1, PSU1, EV1, and PV1 bits in FLMCR1 are enabled only when FWE =
1 and SWE = 1; writes to the E1 bit only when FWE = 1, SWE = 1, and ESU1 = 1; and writes to
the P1 bit only when FWE = 1, SWE = 1, and PSU1 = 1.
Bit 7: Flash Write Enable (FWE)
Sets hardware protection against flash memory programming/erasing.
Bit 7
FWE Description
0 When a low level is input to the FWE pin (hardware-protected state)
1 When a high level is input to the FWE pin
6 5
SWE ESU1 PSU1
0 0
R/W R/W R/W
4 3 2
EV1 PV1
0 0 0
R/W R/W
Rev. 2.0, 11/00, page 179 of 1037
1 0
E1 P1
0 0
R/W R/W