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Section 24 Flash Memory
24.13
Usage Notes
1. The initial state of the product at its shipment is in the erased state. For the product whose
revision of erasing is undefined, we recommend to execute automatic erasure for checking the
initial state (erased state) and compensating.
2. For the PROM programmer suitable for programmer mode in this LSI and its program version,
refer to the instruction manual of the socket adapter.
3. If the socket, socket adapter, or product index does not match the specifications, too much
current flows and the product may be damaged.
4. Use a PROM programmer that supports the device with 128-kbyte on-chip flash memory and
3.0-V programming voltage. Use only the specified socket adapter.
5. Do not power off the Vcc power supply (including the removal of the chip from the PROM
programmer) during programming/erasing in which a high voltage is applied to the flash
memory. Doing so may damage the flash memory permanently. If a reset is input accidentally,
the reset must be released after the reset input period of at least 100µs.
6. The flash memory is not accessible until FKEY is cleared after programming/erasing starts. If
the operating mode is changed and this LSI is restarted by a reset immediately after
programming/erasing has finished, secure the reset input period (period of RES = 0) of at least
100µs. Transition to the reset state during programming/erasing is inhibited. If a reset is input
accidentally, the reset must be released after the reset input period of at least 100µs.
7. In on-board programming mode or programmer mode, programming of the 128-byte
programming-unit block must be performed only once. Perform programming in the state
where the programming-unit block is fully erased.
8. When the chip is to be reprogrammed with the programmer after execution of programming or
erasure in on-board programming mode, it is recommended that automatic programming is
performed after execution of automatic erasure.
9. To program the flash memory, the program data and program must be allocated to addresses
which are higher than those of the external interrupt vector table and H'FF must be written to
all the system reserved areas in the exception handling vector table.
10. If data other than H'FF (4 bytes) is written to the key code area (H'00003C to H'00003F) of the
flash memory, reading cannot be performed in programmer mode. (In this case, data is read as
H'00. Rewrite is possible after erasing the data.) For reading in programmer mode, make sure
to write H'FF to the entire key code area.
11. If data other than H'FF is to be written to the key code area in programmer mode, a verification
error will occur unless a software countermeasure is taken for the PROM programmer and
version of program.
Rev. 1.00 May 09, 2008 Page 798 of 954
REJ09B0462-0100
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