Renesas H8S/2100 Series Hardware Manual page 794

6-bit single-chip microcomputer
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Section 24 Flash Memory
Error protection is canceled by a reset. Note that the reset should be released after the reset input
period of at least 100µs has passed. Since high voltages are applied during programming/erasing
of the flash memory, some voltage may remain after the error protection state has been entered.
For this reason, it is necessary to reduce the risk of damaging the flash memory by extending the
reset input period so that the charge is released.
The state-transition diagram in figure 24.16 shows transitions to and from the error protection
state.
Programming/erasing
mode
Read disabled
Programming/erasing enabled
FLER = 0
Error occurrence
Error-protection mode
Read enabled
Programming/erasing disabled
FLER = 1
Rev. 1.00 May 09, 2008 Page 768 of 954
REJ09B0462-0100
RES = 0
Software standby mode
Cancelling
software standby mode
Figure 24.16 Transitions to Error Protection State
Reset
(hardware protection)
Read disabled
Programming/erasing disabled
FLER = 0
Programming/erasing interface
RES = 0
register is in its initial state.
Error-protection mode
(software standby)
Read disabled
Programming/erasing disabled
FLER = 1
Programming/erasing interface
register is in its initial state.

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