Renesas RL78 Series User Manual page 897

RL78/G1D
30.10 RAM Data Retention Characteristics
(T = -40 to +85°C)
A
Parameter
Data retention supply voltage
Note The value depends on the POR detection voltage. When the voltage drops, the data is retained before a POR
reset is effected, but data is not retained when a POR reset is effected.
V
DD
STOP instruction execution
Standby release signal
(interrupt request)
30.11 Flash Memory Programming Characteristics
(T = –40 to +85°C, 1.8 V ≤ V
A
Parameter
CPU/peripheral hardware clock
frequency
Number of code flash rewrites
Notes 1, 2, 3
Number of data flash rewrites
Notes 1, 2, 3
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. This shows the flash memory characteristics. This is a result obtained from Renesas Electronics reliability test.
30.12 Special Flash Memory Programming Communication (UART)
(T = –40 to +85°C, 1.8 V ≤ V
A
Parameter
Transfer rate
R01UH0515EJ0120 Rev.1.20
Dec 16, 2016
Symbol
V
DDDR
STOP mode
RAM data retention
V
DDDR
= V = AV ≤ 3.6 V, V
DD DD_RF DD_RF
Symbol
f 1.8 V ≤ V ≤ 3.6 V
CLK DD
C Retained for 20 years, T
erwr
Retained for 1 year, T
Retained for 5 years, T
Retained for 20 years, T
= V = AV ≤ 3.6 V, V
DD DD_RF DD_RF
Symbol
When programming of flash memory
CHAPTER 30 ELECTRICAL SPECIFICATIONS
Conditions
= V = AV
SS SS_RF SS_RF
Conditions
= 85°C
A
= 25°C
A
= 85°C
A
= 85°C
A
= V = AV
SS SS_RF SS_RF
Conditions
MIN. TYP. MAX.
Note
1.46 3.6
Operation mode
= 0 V)
MIN. TYP. MAX.
1 32
1,000
1,000,000
100,000
10,000
= 0 V)
MIN. TYP. MAX.
115,200 1,000,000
Unit
V
Unit
MHz
Times
Times
Times
Times
Unit
bps
876