Samsung S3C6400X User Manual page 181

NAND FLASH CONTROLLER
PROGRMMABLE BLOCK ADDRESS REGISTER
Register Address
NFSBLK 0x70200020
NFEBLK 0x70200024
NFSBLK
Reserved
SBLK_ADDR2
SBLK_ADDR1
SBLK_ADDR0
Note: Advance Flash's block Address start from 3-address cycle. So block address register only needs 3-bytes
NFEBLK
Reserved
EBLK_ADDR2
EBLK_ADDR1
EBLK_ADDR0
Note: Advance Flash's block Address start from 3-address cycle. So block address register only needs 3-bytes
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
8-20
Specifications and information herein are subject to change without notice.
R/W
R/W NAND Flash programmable start block address
R/W NAND Flash programmable end block address
Nand Flash can be programmed between start and end
address.
When the Soft lock or Lock-tight is enabled and the Start
and End address has same value, Entire area of NAND
flash will be locked.
Bit
[31:24]
Reserved
rd
[23:16] The 3 block address of the block erase operation
nd
[15:8]
The 2 block address of the block erase operation
st
[7:0]
The 1 block address of the block erase operation
(Only bit [7:5] are valid)
Bit
[31:24] Reserved
rd
[23:16]
The 3 block address of the block erase operation
nd
[15:8]
The 2 block address of the block erase operation
st
[7:0]
The 1 block address of the block erase operation
(Only bit [7:5] are valid)
S3C6400X RISC MICROPROCESSOR
Description
Description
Description
Reset Value
0x000000
0x000000
Initial State
0x00
0x00
0x00
0x00
.
Initial State
0x00
0x00
0x00
0x00
.