Samsung S3C6400X User Manual page 172

S3C6400X RISC MICROPROCESSOR
NAND FLASH MEMORY MAPPING
OM[4:3] = 01/10/11
0x40000_0000
0x3800_0000
0x3000_0000
SROM/OneNAND/NAND
0x2800_0000
SROM/OneNAND/NAND
0x2000_0000
0x1800_0000
0x1000_0000
0x0C00_0000
0x0800_0000
0x0000_0000
[ Not using NAND flash for boot ROM ]
Note: SROM means ROM or SRAM or NOR type memory
SROM/CF
(Xm0CSn[5])
SROM/CF
(Xm0CSn[4])
(Xm0CSn[3])
(Xm0CSn[2])
SROM
(Xm0CSn[1])
SROM
(Xm0CSn[0])
Stepping Stone
Internal ROM
Boot area
Figure 8-5. NAND Flash Memory Mapping Block Diagram
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
Specifications and information herein are subject to change without notice.
OM[4:3] = 00
SROM/CF
(Xm0CSn[5])
SROM/CF
(Xm0CSn[4])
SROM/OneNAND/NAND
(Xm0CSn[3])
NAND(Stepping Stone)
(Xm0CSn[2])
SROM
(Xm0CSn[1])
SROM
(Xm0CSn[0])
Stepping Stone
Internal ROM
Boot Internal
Stepping Stone (4KB)
[ Using NAND flash for boot ROM ]
(advanced/normal)
NAND FLASH CONTROLLER
2MB/4MB/8MB/16MB
/32MB/64MB/128MB
}
Refer to
Table 5-1
2MB/4MB/8MB/16MB
/32MB/64MB/128MB
128MB
128MB
1GB
HADDR[29:0]
Accessible
Region
128MB
128MB
128MB
128MB
8-11