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Section 24 ROM
Notes: 1. Prewriting (writing 0 to all data in erased block) is not necessary.
2. The values of x, y, z, α, β, γ, ε, η, θ, and N are shown in section 29.6, Flash Memory Characteristics.
3. Verify data is read in 16-bit (word) units.
4. Set only a single bit in EBR1 and EBR2. Do not set more than one bit.
5. Erasing is performed in block units. To erase multiple blocks, each block must be erased in turn.
Rev. 3.00 Jan 25, 2006 page 736 of 872
REJ09B0286-0300
START
Set SWE bit in FLMCR1
Wait ( x ) µs
n = 1
Set EBR1 and EBR2
Enable WDT
Set ESU bit in FLMCR2
Wait ( y ) µs
Set E bit in FLMCR1
Wait ( z ) ms
Clear E bit in FLMCR1
Wait ( α ) µs
Clear ESU bit in FLMCR2
Wait (β) µs
Disable WDT
Set EV bit in FLMCR1
Wait (γ) µs
Set block start address
as verify address
H'FF dummy write to verify address
Wait (ε) µs
Read verify data
Increment
address
Verify data
= all "1"?
OK
NG
Last address
of block?
OK
Clear EV bit in FLMCR1
Wait (η) µs
*
5
NG
All erase blocks erased?
Clear SWE bit in FLMCR1
Wait (θ) µs
End of erasing
Figure 24.10 Erase/Erase-Verify Flowchart
*
1
*
2
*
4
*
2
Start of erasing
*
2
End of erasing
*
2
*
2
*
2
*
2
*
3
NG
Clear EV bit in FLMCR1
*
2
OK
Clear SWE bit in FLMCR1
n¬n + 1
Wait (η) µs
*
2
*
2
NG
n ≥ ( N ) ?
OK
Wait (θ) µs
Erase failure
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