Usage Notes; Figure 24.11 Memory Map In Programmer Mode - Renesas H8S/2158 User Manual

16-bit single-chip microcomputer h8s family/h8s/2100 series
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MCU mode
H'000000
H'03FFFF
24.12

Usage Notes

The following lists notes on the use of on-board programming modes and programmer mode.
1. Perform programming/erasing with the specified voltage and timing.
If a voltage higher than the rated voltage is applied, the product may be fatally damaged. Use a
PROM programmer that supports the Renesas 256-kbyte flash memory on-chip MCU device at
3.3 V. Do not set the programmer to HN28F101 or the programming voltage to 5.0 V. Use
only the specified socket adapter. If other adapters are used, the product may be damaged.
2. Notes on power on/off
At powering on or off the Vcc power supply, fix the RES pin to low and set the flash memory
to hardware protection state. This power on/off timing must also be satisfied at a power-off and
power-on caused by a power failure and other factors.
3. Perform flash memory programming/erasing in accordance with the recommended algorithm
In the recommended algorithm, flash memory programming/erasing can be performed without
subjecting this LSI to voltage stress or sacrificing program data reliability. When setting the P
or E bit in FLMCR1 to 1, set the watchdog timer against program runaway.
4. Do not set/clear the SWE bit during program execution in the flash memory.
Do not set/clear the SWE bit during program execution in the flash memory. An interval of at
least 100 µs is necessary between program execution or data reading in flash memory and
SWE bit clearing. When the SWE bit is set to 1, flash memory data can be modified, however,
flash memory data can be read only in program-verify or erase-verify mode. Do not access the
flash memory for a purpose other than verification during programming/erasing. Do not clear
the SWE bit during programming, erasing, or verifying.
5. Do not use interrupts during flash memory programming/erasing
In order to give the highest priority to programming/erasing operation, disable all interrupts
including NMI input when the flash memory is programmed or erased.
This LSI
On-chip ROM area

Figure 24.11 Memory Map in Programmer Mode

Programmer mode
H'00000
H'3FFFF
Rev. 3.00 Jan 25, 2006 page 739 of 872
Section 24 ROM
REJ09B0286-0300

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