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Section 29 Electrical Characteristics
2. Programming time per 128 bytes (Shows the total period for which the P bit in FLMCR1
is set. It does not include the program verification time.)
3 Block erase time (Shows the total period for which the E bit in FLMCR1 is set. It does
not include the erase verification time.)
4. Maximum programming time (tP max)
tP max = (wait time after P-bit setting (z1) + (z3)) x 6
+ wait time after P-bit setting (z2) x ((N) – 6)
5. Set the maximum programming count (N) to a value less than the maximum
programming time (tP max), with referencing the actual z1, z2, and z3 settings. The
wait time after P-bit setting (z1, z2, and z3) should be changed depending on the
programming count (n).
Programming count(n)
1 ≤ n ≤ 6 z1 = 30 µs, z3 = 10 µs
7 ≤ n ≤ 1000 z2 = 200 µs
6. Maximum erase time (tE max)
tE max = wait time after E-bit setting (z) × maximum erase count (N)
7. Set the maximum erase count (N) to a value less than the maximum erase time (tE
max), with referencing the actual (z) setting.
8. Minimum number of times for which all characteristics are guaranteed after rewriting.
(Guarantee range is 1 to minimum value.)
9. Reference value for 25°C (as a guideline, rewriting should normally function up to this
value).
10.Data retention characteristic when rewriting is performed within the specification range,
including the minimum value.
Rev. 3.00 Jan 25, 2006 page 860 of 872
REJ09B0286-0300
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