Interrupts During Flash Memory Programming/Erasing; Programmer Mode - Renesas H8S/2158 User Manual

16-bit single-chip microcomputer h8s family/h8s/2100 series
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Section 24 ROM
The FLMCR1, FLMCR2, EBR1, and EBR2 settings are retained, but program mode or erase
mode is aborted at the point at which the error occurred. Program mode or erase mode cannot be
entered by setting the P or E bit to 1. However, because the PV and EV bit settings are retained, a
transition to verify mode can be made. The error protection state can be cancelled by a reset or in
hardware standby mode.
24.10

Interrupts during Flash Memory Programming/Erasing

In order to give the highest priority to programming/erasing operations, disable all interrupts
including NMI input during flash memory programming/erasing (the P or E bit in FlMCR1 is set
to 1) or boot program execution *
1. If an interrupt is generated during programming/erasing, operation in accordance with the
program/erase algorithm is not guaranteed.
2. CPU runaway may occur because normal vector reading cannot be performed in interrupt
exception handling during programming/erasing *
3. If an interrupt occurs during boot program execution, the normal boot mode sequence cannot
be executed.
Notes: 1. Interrupt requests must be disabled inside and outside the CPU until the programming
control program has completed programming.
2. The vector may not be read correctly for the following two reasons:
• If flash memory is read while being programmed or erased (while the P or E bit in
FLMCR1 is set to 1), correct read data will not be obtained (undefined values will
be returned).
• If the interrupt entry in the vector table has not been programmed yet, interrupt
exception handling will not be executed correctly.
24.11

Programmer Mode

In programmer mode, the on-chip flash memory can be programmed/erased by a PROM
programmer via a socket adapter, just like for a discrete flash memory. Use a PROM programmer
that supports the Renesas 256-kbyte flash memory on-chip MCU device. Figure 24.11 shows a
memory map in programmer mode.
Note: * For this LSI, set the programming voltage of the PROM programmer to 3.3V.
Rev. 3.00 Jan 25, 2006 page 738 of 872
REJ09B0286-0300
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