Erase/Erase-Verify; Interrupt Handling When Programming/Erasing Flash Memory - Renesas H8 Series Hardware Manual

Section 6 ROM
6.8.2

Erase/Erase-Verify

When erasing flash memory, the erase/erase-verify flowchart shown in figure 6.11 should be
followed.
1. Prewriting (setting erase block data to all 0s) is not necessary.
2. Erasing is performed in block units. Make only a single-bit specification in the erase block
register (EBR). To erase multiple blocks, each block must be erased in turn.
3. The time during which the E bit is set to 1 is the flash memory erase time.
4. The watchdog timer (WDT) is set to prevent overerasing due to program runaway, etc. An
overflow cycle of approximately 19.8 ms is allowed.
5. For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower 1 bit
is b'0. Verify data can be read in word size from the address to which a dummy write was
performed.
Do not use RTS instruction from dummy write to verify data read. (This does not apply to the
HD64F38124 and HD64F38122.)
6. If the read data is not erased successfully, set erase mode again, and repeat the erase/erase-
verify sequence as before. The maximum number of repetitions of the erase/erase-verify
sequence is 100.
6.8.3

Interrupt Handling when Programming/Erasing Flash Memory

All interrupts, are disabled while flash memory is being programmed or erased, or while the boot
program is executing, for the following three reasons:
1. Interrupt during programming/erasing may cause a violation of the programming or erasing
algorithm, with the result that normal operation cannot be assured.
2. If interrupt exception handling starts before the vector address is written or during
programming/erasing, a correct vector cannot be fetched and the CPU malfunctions.
3. If an interrupt occurs during boot program execution, normal boot mode sequence cannot be
carried out.
Rev. 7.00 Mar 10, 2005 page 172 of 652
REJ09B0042-0700