Flash Memory Programming And Erasing Precautions (Dual-Power Supply) - Renesas F-ZTAT H8 Series Hardware Manual

19.8 Flash Memory Programming and Erasing Precautions (Dual-Power
Supply)
(1) Program with the specified voltages and timing.
The rated programming voltage (V
If the PROM programmer is set to Renesas Technology HN28F101 specifications, V
12.0 V. Applied voltages in excess of the rating can permanently damage the device. Insure, in
particular, that peak overshoot at the Vpp and MD2 pins does not exceed the maximum rating of
13 V. Also, be very careful about PROM programmer overshoot.
(2) Before programming, check that the chip is correctly mounted in the PROM
programmer. Overcurrent damage to the device can result if the index marks on the PROM
programmer socket, socket adapter, and chip are not correctly aligned.
(3) Don't touch the socket adapter or chip while programming. Touching either of these can
cause contact faults and write errors.
(4) Precautions in turning the programming voltage (V
19.24):
• Apply the programming voltage (V
stable condition. Shut off V
condition. If V is turned on or off while V
PP
to 5.5 V), since microcontroller operation is unstable and flash memory protection is not
functioning, the flash memory may be programmed or erased by mistake. This can occur even
if V = 0 V. The same danger of incorrect programming or erasing exists when V
CC
its rated voltage range (V
oscillator has stopped (except in standby), or if a program runaway has occurred. After V
power-up, do not apply V
and the microcontroller is safely in the reset state, or the reset has been cleared.
These power-on and power-off timing requirements should also be satisfied in the event of a
power failure and recovery from a power failure. If these requirements are not satisfied, the
flash memory may not only be unintentionally programmed or erased; it may be permanently
damaged.
• The V
bit in the flash memory control register (FLMCR) is set or cleared when the V
PP
in FLMCR is set or cleared while a voltage of 12.0 ± 0.6 V is being applied to the V
After the V E bit is set, it becomes possible to write the erase block registers (EBR1 and
PP
EBR2) and the EV, PV, E, and P bits in FLMCR. Accordingly, program or erase flash memory
Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
) of the flash memory is 12.0 V.
PP
) after the rise of V
PP
before V , again while the microcontroller is in a stable
PP CC
CC
= 2.7 to 5.5 V) if the clock oscillator has not stabilized, if the clock
CC
until the clock oscillator has had time to settle (t
PP
) on and off (see figures 19.22 to
PP
, when the microcontroller is in a
CC
is not within its rated voltage range (V
Rev. 7.00 Sep 21, 2005 page 643 of 878
= 12 V))
PP
will be
PP
= 2.7
CC
is within
CC
CC
= 20 ms min)
OSC1
E bit
PP
pin.
PP
REJ09B0259-0700