Samsung S5PC110 Manual page 42

S5PC110_UM
2.1.4.3 Type C IO Driver Strength
( VDD=1.8V±VDDx10% )
Parameter
Driver Type
DS0=0,DS1=0
DS0=0,DS1=1
1.8V MDDR IO
DS0=1,DS1=0
DS0=1,DS1=1
( VDD=1.2V±VDDx10% )
Parameter
Driver Type
DS0=0,DS1=0
DS0=0,DS1=1
1.8V MDDR IO
DS0=1,DS1=0
DS0=1,DS1=1
NOTE: 1. Isink is measured at 0.2 x VDD
NOTE: 2. Isource is measured at 0.8 X VDD
- Mesured point is different from measurement spec of 65nm IO Driver
Worst
VDD=1.65V
T=125℃
Process=Slow
Isink at VDD*0.2V
Isource at VDD*0.8V
Isink 3.37mA
Isource -2.62mA
Isink 6.74mA
Isource -6.10mA
Isink 10.10mA
Isource -6.97mA
Isink 11.77mA
Isource -11.32mA
Worst
VDD=1.045V
T=125℃
Process=Slow
Isink at VDD*0.2V
Isource at VDD*0.8V
Isink 1.10mA
Isource -1.05mA
Isink 2.20mA
Isource -2.45mA
Isink 3.30mA
Isource -2.80mA
Isink 3.85mA
Isource -4.55mA
2 GENERAL PURPOSE INPUT/ OUTPUT
Currents
Typical
VDD=1.80V
T=25℃
Process=Nominal
Isink at VDD*0.2V
Isource at VDD*0.8V Isource at VDD*0.8V
5.60mA
-4.32mA
11.21mA
-10.08mA
16.80mA
-11.51mA
19.59mA
-18.70mA
Currents
Typical
VDD=1.1V
T=25℃
Process=Nominal
Isink at VDD*0.2V
Isource at VDD*0.8V Isource at VDD*0.8V
2.22mA
-1.92mA
4.45mA
-4.49mA
6.67mA
-5.12mA
7.78mA
-8.32mA
Best
VDD=1.95V
T=-25℃
Process=Fast
Isink at VDD*0.2V
8.36mA
-6.67mA
16.73mA
-15.58mA
25.07mA
-17.80mA
29.24mA
-28.90mA
Best
VDD=1.155V
T=-25℃
Process=Fast
Isink at VDD*0.2V
3.95mA
-3.30mA
7.91mA
-7.70mA
11.86mA
-8.79mA
13.82mA
-14.29mA
2-7