Io Driver Strength - Samsung S5PC110 Manual

Risc microprocessor
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S5PC110_UM

2.1.4 IO DRIVER STRENGTH

2.1.4.1 Type A IO Driver Strength
( VDD=3.3V±0.3V)
Parameter
Driver Type
DS0=0,DS1=0
DS0=0,DS1=1
3.3V IO
DS0=1,DS1=0
DS0=1,DS1=1
( VDD=2.5V±0.2V)
Parameter
Driver Type
DS0=0,DS1=0
DS0=0,DS1=1
3.3V IO
DS0=1,DS1=0
DS0=1,DS1=1
Worst
VDD=3.00V
T=125℃
Process=Slow
Isink at VDD*0.2V
Isource at VDD*0.8V
Isink
7.005 mA
Isource
-7.103 mA
Isink
11.69 mA
Isource
-11.37 mA
Isink
16.35 mA
Isource
-17.06 mA
Isink
30.38 mA
Isource
-28.44 mA
Worst
VDD=2.30V
T=125℃
Process=Slow
Isink at VDD*0.2V
Isource at VDD*0.8V
Isink
4.497 mA
Isource
-4.405 mA
Isink
7.501 mA
Isource
-7.053 mA
Isink
10.50 mA
Isource
-10.58 mA
Isink
19.50 mA
Isource
-17.63 mA
2 GENERAL PURPOSE INPUT/ OUTPUT
Currents
Typical
VDD=3.30V
T=25℃
Process=Nominal
Isink at VDD*0.2V
Isource at VDD*0.8V
Isource at VDD*0.8V
11.19 mA
-10.88 mA
18.67 mA
-17.42 mA
26.12 mA
-26.14 mA
48.52 mA
-43.56 mA
Currents
Typical
VDD=2.50V
T=25℃
Process=Nominal
Isink at VDD*0.2V
Isource at VDD*0.8V
Isource at VDD*0.8V
7.461 mA
-6.993 mA
12.44 mA
-11.19 mA
17.41 mA
-16.79 mA
32.35 mA
-27.98 mA
Best
VDD=3.60V
T=-40℃
Process=Fast
Isink at VDD*0.2V
15.92 mA
-15.63 mA
26.54 mA
-25.02 mA
37.15 mA
-37.53 mA
69.01 mA
-62.55 mA
Best
VDD=2.70V
T=-40℃
Process=Fast
Isink at VDD*0.2V
11.12 mA
-10.42 mA
18.55 mA
-16.67 mA
25.96 mA
-24.75 mA
48.22 mA
-41.68 mA
2-4

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