Samsung S5PC110 Manual page 41

S5PC110_UM
( VDD=2.5V±0.2V )
Parameter
Driver Type
DS0=0,DS1=0
DS0=0,DS1=1
3.3V IO
DS0=1,DS1=0
DS0=1,DS1=1
( VDD=1.8V±0.15V )
Parameter
Driver Type
DS0=0,DS1=0
DS0=0,DS1=1
3.3V IO
DS0=1,DS1=0
DS0=1,DS1=1
NOTE: 1. Isink is measured at 0.2 x VDD
NOTE: 2. Isource is measured at 0.8 X VDD
- Mesured point is different from measurement spec of 65nm IO Driver
Worst
VDD=2.30V
T=125℃
Process=Slow
Isink at VDD*0.2V
Isource at
VDD*0.8V
Isink 1.85mA
Isource -1.72mA
Isink 7.41mA
Isource -6.88mA
Isink 12.97mA
Isource -12.04mA
Isink 18.53mA
Isource -17.19mA
Worst
VDD=1.65V
T=12 ℃
Process=Slow
Isink at VDD*0.2V
Isource at
VDD*0.8V
Isink 0.99mA
Isource -0.91mA
Isink 3.96mA
Isource -3.63mA
Isink 6.93mA
Isource -6.35mA
Isink 9.9mA
Isource -9.06mA
2 GENERAL PURPOSE INPUT/ OUTPUT
Currents
Typical
VDD=2.50V
T=25℃
Process=Nominal
Isink at VDD*0.2V
Isource at VDD*0.8V
3.05mA
-2.73mA
12.22mA
-10.93mA
21.38mA
-19.12mA
30.54mA
-27.32mA
Currents
Typical
VDD=1.80V
T=25℃
Process=Nominal
Isink at VDD*0.2V
Isource at VDD*0.8V
1.73mA
-1.53mA
6.93mA
-6.1mA
12.12mA
-10.68mA
17.32mA
-15.26mA
Best
VDD=2.70V
T=-40℃
Process=Fast
Isink at VDD*0.2V
Isource at VDD*0.8V
4.53mA
-4.08mA
18.11mA
-16.3mA
31.69mA
-28.52mA
45.27mA
-40.75mA
Best
VDD=1.95V
T=-40℃
Process=Fast
Isink at VDD*0.2V
Isource at VDD*0.8V
2.74mA
-2.41mA
10.94mA
-9.64mA
19.14mA
-16.88mA
27.35mA
-24.11mA
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