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cannot be re-entered by re-setting the P or E bit. However, since PV and EV bit setting is enabled,
and a transition can be made to verify mode. The error protection state can be canceled by a reset
or in hardware standby mode.
19.10
Programmer Mode
In programmer mode, a PROM programmer can perform programming/erasing via a socket
adapter, just like for a discrete flash memory. Use a PROM programmer which supports the
Renesas 512-kbyte flash memory on-chip MCU device type (FZTAT512V3A). A 12-MHz input
clock is needed.
19.11
Power-Down States for Flash Memory
In user mode, the flash memory will operate in either of the following states:
• Normal operating mode
The flash memory can be read.
• Standby mode
All flash memory circuits are halted.
Table 19.7 shows the correspondence between the operating modes of this LSI and the flash
memory. When the flash memory returns to normal operation from a standby state, a power
supply circuit stabilization period is needed. When the flash memory returns to its normal
operating state, bits STS3 to STS0 in SBYCR must be set to provide a wait time of at least 100 µs,
even when the external clock is being used.
Table 19.7 Flash Memory Operating States
Operating Mode
Active mode
Sleep mode
Standby mode
19.12
Usage Notes
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
programmer mode are summarized below.
1. Use the specified voltages and timing for programming and erasing.
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Renesas microcomputer device type with 512-kbyte on-chip
flash memory (FZTAT512V3A).
Flash Memory Operating State
Normal operating state
Normal operating state
Standby state
Rev. 2.00, 05/03, page 669 of 820
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