Interfacing Memories With The Omap5910 Device - Texas Instruments OMAP5910 Technical Reference Manual

Interfacing Memories With the OMAP5910 Device

4.5 Interfacing Memories With the OMAP5910 Device
This section provides two examples of how to connect memories to the
OMAP5910 device. Many scenarios can be considered using different kinds
of memories. For flash memories, Intel and Hitachi products are used. For
SDRAM and SRAM, Hitachi and Toshiba products are used, respectively.
The Intel flash memory has a total capacity of 160M bits (8M x 8 x 2 chips and
2M x 16). Program code uses two Intel 28F64J3A memories, and data uses
Intel 28F32J3A. The power supply voltages for these memories range from
2.7 V to 3 V. Hitachi memory has a total capacity of 96M bits in this example.
Two flash memories are used for program code, and one flash memory is used
for data. The power supply voltage also ranges from 2.7 V to 3 V.
Hitachi SDRAM (HM52Y64165F) has a total capacity of 64M bits (4M x 16).
Its power supply voltage ranges from 2.5 V to 2.8 V. Toshiba SRAM
(JT5MM6A-AD) has 8M-bit capacity and 2.7-V to 3-V power supply voltage
ranges.
Figure 4–19 shows external memory interconnection using Intel flash
memory, and Figure 4–20 shows external memory interconnection using
Hitachi flash memory.
Memory Interface Traffic Controller 4-57