Asynchronous Write With We Operation - Texas Instruments OMAP5910 Technical Reference Manual

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Asynchronous Write With WE Operation

Figure 4–7. Asynchronous Write With WE Operation

The asynchronous write is used for both file flash and burst flash devices.

Figure 4–7 shows the timing diagram. Burst write operation is not supported.

FLASH.CS_[X]

The flash device latches the data on the rising edge of FLASH.WE; data hold

time specified is 0 ns minimum, which can be ensured by one TC clock cycle.

The FLASH.WE low pulse duration is programmable for each device through

the WELEN field in the flash configuration register. The number of wait states

between write operations is programmable for each device through the

WRWST field in the configuration register.

The duration from falling FLASH.CS to falling FLASH.WE (shown in

Figure 4–7) is equal to the programmed value of WRWST + 1, and the duration

for which FLASH.WE is asserted active low is equal to the programmed value

of WELEN + 1.

The FLASH.CLK signal is not driven externally (maintained low) in the asyn-

chronous write mode.

Address valid

Data to Flash

Memory Interface Traffic Controller

Memory Interfaces