Renesas RL78/G1P Hardware User Manual page 763

RL78/G1P
27.7 RAM data retention characteristics
= 40 to +85C, V
(T = 0 V)
A SS
Parameter
Data retention supply voltage
Note The value depends on the POR detection voltage. When the voltage drops, the data is retained before a POR
reset is effected, but data is not retained when a POR reset is effected.
V
DD
STOP instruction execution
Standby release signal
(interrupt request)
27.8 Flash Memory Programming Characteristics
= 40 to +85C, 2.7 V  V
(T
A
Parameter
System clock frequency
Number of code flash rewrites
Note 1, 2, 3
Number of data flash rewrites
Note 1, 2, 3
Operating ambient temperature
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite.
The retaining years are until next rewrite after the rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas
Electronics Corporation.
R01UH0895EJ0100 Rev.1.00
Nov 29, 2019
Symbol
V
DDDR
STOP mode
Data retention mode
V
DDDR
 3.6 V, V
= 0 V)
DD SS
Symbol
2.7 V  V  3.6 V
f
CLK DD
C Retained for 20 years
erwr
= 85  C
T
A
Retained for 1 years
= 25  C
T
A
Retained for 5 years
= 85  C
T
A
In flash memory programming mode
In the self-programming mode
CHAPTER 27 ELECTRICAL SPECIFICATIONS
Conditions
Conditions
100,000
MIN. TYP. MAX.
1.46 Note 3.6
Operation mode
MIN. TYP. MAX.
1 32
1,000
1,000,000
0 to +40
 40 to +85
Unit
V
Unit
MHz
Times
 C
 C
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