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20.9
Usage Notes
1. The initial state of the Renesas Technology product at its shipment is in the erased state. For
the product whose revision of erasing is undefined, we recommend to execute automatic
erasure for checking the initial state (erased state) and compensating.
2. For the PROM programmer suitable for programmer mode in this LSI and its program version,
refer to the instruction manual of the socket adapter.
3. If the socket, socket adapter, or product index does not match the specifications, overcurrent
flows and the product may be damaged.
4. If a voltage higher than the rated voltage is applied, the product may be fatally damaged. Use a
PROM programmer that supports the Renesas Technology MCU device with 256-kbyte flash
memory at 3.3 V. Do not set the programmer to HN28F101 or the programming voltage to 5.0
V. Use only the specified socket adapter. If other adapters are used, the product may be
damaged.
5. Do not remove the chip from the PROM programmer nor input a reset signal during
programming/erasing. As a high voltage is applied to the flash memory during
programming/erasing, doing so may damage or destroy flash memory permanently. If reset is
executed accidentally, reset must be released after the reset input period of 100 µs which is
longer than normal.
6. The flash memory is not accessible until FKEY is cleared after programming/erasing
completes. If this LSI is restarted by a reset immediately after programming/erasing has
finished, secure the reset period (period of RES = 0) of more than 100 µs. Though a transition
to the reset state or hardware standby state during programming/erasing is prohibited, if reset is
executed accidentally, reset must be released after the reset input period of 100 µs which is
longer than normal.
7. At powering on or off the Vcc power supply, fix the RES pin to low and set the flash memory
to the hardware protection state. This power on/off timing must also be satisfied at a power-off
and power-on caused by a power failure and other factors.
8. Program the area with 128-byte programming-unit blocks in on-board programming or
programmer mode only once. Perform programming in the state where the programming-unit
block is all erased.
9. When the chip is to be reprogrammed with the programmer after execution of programming or
erasure in on-board programming mode, it is recommended that automatic programming be
performed after execution of automatic erasure.
10. To program data to the flash memory, data or programs must be allocated to addresses higher
than that of the external interrupt vector table (H'000040) and H'FF must be written to the
areas that are reserved for the system in the exception handling vector table.
11. If data other than H'FF (four bytes) is written to the key code area (H'00003C to H'00003F) of
flash memory, reading cannot be performed in programmer mode. (In this case, data is read as
H'00. Rewrite is possible after erasing the data.) For reading in programmer mode, make sure
to write H'FF to the entire key code area. If data other than H'FF is to be written to the key
Rev. 1.00, 09/03, page 608 of 704
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